
LOW-DOPED SEMI-INSULATING SIC CRYSTALS AND METHOD - II-VI
2007620-Abstract not available for EP1782454Abstract of corresponding document: WO2006017074The invention relates to substrates of semi-
2007620-Abstract not available for EP1782454Abstract of corresponding document: WO2006017074The invention relates to substrates of semi-
This article reports a novel and efficient method to synthesize graphene using a thermal decomposition process. In this method, silicon carbide (SiC) thin
A low-resistance p-type SiC single crystal containing no inclusions is provided. This is achieved by a method for producing a SiC single crystal wherein
グローをしたCVDによるのSiCコーティング [in Japanese] SiC Coating on Graphite Using C. V. D. Method with Glow Discharge [in Japanes
2018813-findbug,Java。 CN: clone method does not call super.cloneSIC: Deadly embrace of
Pressure,temperature,flow,level,pH,tachometers,stroboscopes,rpm,dataloggers,indicators,panelmeters,tranmitters,differential pressure, vacuum,gauges,pressure
201161-The Hexgenal hole is the normal defect in the SiC crystal growth.The hexgenal hole defect is inhibited effectively by improving the SiC seed
201861-Download Citation on ResearchGate | On Jun 1, 2018, Chengwu Hui and others published Research on Current Sharing Method of SiC MOSFET Parall
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When an SiC single crystal having a large diameter of a {0001} plane is produced by repeating a-plane growth, the a-plane growth of the SiC single
20131010-Accurate genomic variant detection is an essential step in gleaning medically useful information from genome data. However, low concordance
2019412-Scientific Reports is an online multidisciplinary, open access journal from the publishers of Nature.
2014220-A method of forming an SiC crystal including placing a seed crystal of SiC in an insulated graphite container; placing a source of Si and C
SiC-Al2 O3 composite sintered bodies having high strength and toughness are constructed by dispersing SiC particle and SiC
A SiC wafer is produced from an SiC ingot having an end surface by setting the focal point of a laser beam at a predetermined depth from the end
METHOD FOR PRODUCING SIC SINGLE CRYSTAL The purpose of the present invention is to produce a high-quality SiC single crystal with good reproducibility while
A review on the research progress of push-out method in testing interfacial properties of SiC fiber-reinforced titanium matrix composites
The method of high temperature physical vapor transport (HTPVT) is an available approach to prepare silicon carbide (SiC) ceramics with high density and
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Methods for manufacturing silicon carbide wafers having superior specifications for bow, warp, total thickness variation (TTV), local thickness variation (LTV
2010722-#873 SIC_INNER_SHOULD_BE_STATIC_ANON with final method variable Status: closed-fixed Owner: nobody Labels: false positive (312) Priority:
2019412-Scientific Reports is an online multidisciplinary, open access journal from the publishers of Nature.
Complete Patent Searching Database and Patent Data Analytics Services. WO/2000/068474A1 SiC WAFER, SiC SEMICONDUCTOR DEVICE AND SiC WAFER PRODUCTION METHOD
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