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silicon carbide mosfet

Silicon Carbide Power MOSFET Model and Parameter Extraction

A compact circuit simulator model is used to describe the performance of a 2-kV, 5-A 4-H silicon carbide (SiC) power DiMOSFET and to perform a

sic mosfet product page

Based on the advanced and innovative properties of wide bandgap materials, STs 650 V and 1200 V silicon carbide (SiC) MOSFETs feature very low RDS(

P-CHANNEL SILICON CARBIDE MOSFET - Patent application

1. A p-channel silicon carbide MOSFET comprising:a silicon carbide semiconductor substrate;a high-concentration p-type layer containing silicon carbide

Silicon Carbide Power MOSFET | Products Suppliers |

Find Silicon Carbide Power MOSFET related suppliers, manufacturers, products and specifications on GlobalSpec - a trusted source of Silicon Carbide Power

Silicon Carbide (SiC) Semiconductor | Microsemi

Silicon Carbide (SiC) semiconductors, solutions to improve efficiency, smaller form factor and higher operating temperature in industrial and aerospace

N-channel Silicon Carbide Power MOSFET - SCT3120AL |

Based on the advanced and innovative properties of wide bandgap materials, STs 650 V and 1200 V silicon carbide (SiC) MOSFETs feature very low RDS(

MOSFET - STMicroelectronics

2017323-Cree Releases SPICE Model for Silicon Carbide Power MOSFETFEBRUARY 6, 2012 Behavior-based model enables power electronic design engineers to

Silicon Carbide (SiC) Semiconductor | Microsemi

Silicon Carbide (SiC) semiconductors, solutions to improve efficiency, smaller form factor and higher operating temperature in industrial and aerospace

Application Considerations for Silicon Carbide_

Characteristics of 3rd Generation SiC Trench MOSFETs Circuit Example Applications SiC features lower switching loss and superior electrical characteristics i

(silicon carbide,sic)mosfet

Based on the advanced and innovative properties of wide bandgap materials, STs 650 V and 1200 V silicon carbide (SiC) MOSFETs feature very low RDS(

(SiC) - Infineon Technologies

Our Silicon Carbide (SiC) products are ideal when thermal management is desired. Learn more about our Silicon Carbide Diodes properties, characteristics and

Silicon carbide - Wikipedia

Grains of silicon carbide can be bonded together by sintering to form verydiodes, followed by junction-gate FETs and MOSFETs for high-power switching