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ABSTRACTA 1200-V, 600-A silicon carbide (SiC) JFET half-bridgemodule hasperform at the rated temperature specification and werefree of early failures

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Cree Silicon Carbide Substrates and Epitaxy Supported diameters: ◊ 76.2 (see appropriate specification sheet) 0 = on-axis 4 = 4.0° off-axis 8

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