
US7998866B2 - Silicon carbide polishing method utilizing
The inventive method comprises chemically-mechanically polishing a substrate comprising at least one layer of silicon carbide with a polishing composition
The inventive method comprises chemically-mechanically polishing a substrate comprising at least one layer of silicon carbide with a polishing composition
Physical Properties of Silicon CarbideTsunenobu Kimoto Kyoto University, Tools Request permission Export citation Add to favorites Track citation
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we show that the fundamental equations for tunnelling and thermionic emission can accurately model 4H silicon carbide Schottky barrier diodes over
Proceedings of the 6th European Conference on Silicon Carbide and Related Materials. ECSCRM, 2007, Newcastle, France. 556-556, pp.207-210, 2007. 〈hal
2019319-SiC MOSFET devices support highly efficient, rugged and cost-effective high frequency designs in automotive, renewable energy and data cente
fracture strength is possible with dental porcelain containing silicon carbide Article Tools PDF (190 KB) Email Article Add to My Reading List
The silicon carbide (SiC) reinforced epoxy composites has evidenced their reputation as advanced composite material in domain of strength and
intracortical array, now known as the Blackrock microelectrode array [58,We have demonstrated that hexagonal silicon carbide junction isolation electrode
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A manufacturing method of a silicon carbide-based honeycomb structure, including a firing step of introducing extruded honeycomb formed bodies containing a
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Provided are methods and apparatuses for densifying a silicon carbide film using remote plasma treatment. Operations of remote plasma deposition and remote
Arshad, M.; Zafar, Y.; Asad, S., 2013: Silicon carbide whisker-mediated transformation of cotton (Gossypium hirsutum L.) Plant transformation methods
Abstract: Silicon carbide (SiC) ceramic with YAG (Y3Al5O12) additive added by sol-gel method was liquid-phase sintered at different sintering
An edge termination structure for a silicon carbide semiconductor device includes a plurality of spaced apart concentric floating guard rings in a silicon
A semiconductor device includes trench gate structures that extend from a first surface into a semiconductor body of silicon carbide. The trench gate
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