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McMaster-Carr is the complete source for your plant with over 570,000 products. 98% of products ordered ship from stock and deliver same or next day
McMaster-Carr is the complete source for your plant with over 570,000 products. 98% of products ordered ship from stock and deliver same or next day
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Potential deleterious reaction of the boron carbide with silicon during under an inert atmosphere of at least one bar pressure. In this
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A system includes a silicon carbide (SiC) semiconductor device and a hermetically sealed packaging enclosing the SiC semiconductor device. The hermetically
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In slicing a crystal bar into silicon wafers, an average of about 40% of silicon would be loss due to the widths of slicing wire saws themselves
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which resemble a rod along {311} oriented planesThe study of point defects in silicon-carbide isStock, and M. Jaraiz, Nucl. Instr. Meth
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@ improved granular abrasive material (22) comprises silicon carbide particles (23) at least partially coated with an integral, durable surface layer (24)
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